Multi-Layer Compound Passivation and Dual-P Diffusion Enhanced Si Power Diode Performance

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compar...

Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n/p-Junction Diode

We demonstrate an abrupt and box-shaped n/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n/p-junction diodes at 400 ◦C–600 ◦C, based on the...

Schottky barrier diode parameters of Ag/MgPc/p-Si structure

An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V plots indicated that the thermoionic emi...

Novel High-Efficiency Crystalline-Si-Based Compound Heterojunction Solar Cells: HCT (Heterojunction with Compound Thin-layer)

Novel Laser Diode Structure consisting of a Si Waveguide and Compound-Semiconductor MQW layers for Si Platform Integration